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STGD3NB60SD

ST Microelectronics
Part Number STGD3NB60SD
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description ® STGD3NB60SD N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT PRELIMINARY DATA TYPE STGD3NB60SD s VCES 600 V V CE(sat) < 1...
Datasheet PDF File STGD3NB60SD PDF File

STGD3NB60SD
STGD3NB60SD

Overview
® STGD3NB60SD N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT PRELIMINARY DATA TYPE STGD3NB60SD s VCES 600 V V CE(sat) < 1.
5 V IC 3A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).
APPLICATIONS GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM ( • ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at ...


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