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STGD3NB60H

ST Microelectronics
Part Number STGD3NB60H
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description ® STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH™ IGBT TYPE STGD3NB60H s V CES 600 V V CE(sat ) < 2.8 V IC 3 A s ...
Datasheet PDF File STGD3NB60H PDF File

STGD3NB60H
STGD3NB60H

Overview
® STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH™ IGBT TYPE STGD3NB60H s V CES 600 V V CE(sat ) < 2.
8 V IC 3 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( • ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter...


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