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STGD3NB60HD

STMicroelectronics
Part Number STGD3NB60HD
Manufacturer STMicroelectronics
Description N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT
Published Apr 20, 2010
Detailed Description www.DataSheet4U.com STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH™ IGBT TYPE STGD3NB60HD s s s s s VCES 600 V VCE(...
Datasheet PDF File STGD3NB60HD PDF File

STGD3NB60HD
STGD3NB60HD

Overview
www.
DataSheet4U.
com STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH™ IGBT TYPE STGD3NB60HD s s s s s VCES 600 V VCE(sat) (Max) @25°C < 2.
8 V IC @100°C 6A 3 1 s HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STGD3NB60HDT4 MARKING GD3NB60HD PACKAGE DPAK PACKAGING TAPE & REEL September 2003 1/10 www.
DataSheet4U.
com STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 ± 20 10 6 24 50 0.
4 –55 to 150 Unit V V V A A A W W/°C °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.
5 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 ...


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