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CEP02N7

CET
Part Number CEP02N7
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7 CEB02N7 CEI02N7...
Datasheet PDF File CEP02N7 PDF File

CEP02N7
CEP02N7


Overview
CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.
6Ω 6.
6Ω 6.
6Ω 6.
6Ω ID 1.
9A 1.
9A 1.
9A 1.
9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D G G D S CEI SERIES TO-262(I2-PAK) S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAR EAR TJ,Tstg f TO-220F Units V V 700 ±30 1.
9 6 60 0.
48 125 2 5.
4 -55 to 150 1.
9 6 e e A A W W/ C mJ A mJ C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current ...



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