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2SB1678

Panasonic
Part Number 2SB1678
Manufacturer Panasonic
Description Silicon PNP epitaxial planer type Transistor
Published Oct 31, 2005
Detailed Description Transistors 2SB1678 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification I Features • Low collec...
Datasheet PDF File 2SB1678 PDF File

2SB1678
2SB1678

Overview
Transistors 2SB1678 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification I Features • Low collector to emitter saturation voltage VCE(sat) • Large Peak collector current ICP • Mini power type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 4.
0+0.
25 –0.
20 2.
5±0.
1 3˚ 0.
4±0.
04 0.
4±0.
08 1.
5±0.
1 3˚ 1.
0+0.
1 –0.
2 3 1 2 0.
5±0.
08 2.
6±0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 45˚ Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −30 −20 −7 −5 −3 1 150 −55 to +150 Unit 3.
0±0.
15 V V V A A W °C °C 1: Emitter 2: Collector 3: Base MiniP3 Type Package Marking Symbol: 2K Note) *: Printed circuit board copper foil for collector portion area: 1.
0 Cm2 or more, thickness: 1.
7 mm Absolute maximum rating P C Without heat sink shall be 0.
5 W I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1, 2 Symbol ICBO IEBO VCEO VEBO hFE VCE(sat) Cob fT Conditions VCB = −10 V, IE = 0 VEB = −5 V, IC = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = 200 mA IC = −3 A, IB = − 0.
1 A VCB = −20 V, IE = 0, f = 1 MHz VCB = −6 V, IE = 50 mA, f = 200 MHz Min Typ Max −100 −100 Unit nA nA V V −20 −7 90 625 −1 85 120 Collector to emitter saturation voltage *1 Collector output capacitance Transition frequency Note) *1: Pulse measurement *2: Rank classification Rank hFE P 90 to 135 V pF MHz Q 120 to 205 R 180 to 625 0.
4 max.
1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanes...


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