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2SK3494

Panasonic Semiconductor
Part Number 2SK3494
Manufacturer Panasonic Semiconductor
Description N-Channel MOSFET
Published Dec 30, 2005
Detailed Description Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resista...
Datasheet PDF File 2SK3494 PDF File

2SK3494
2SK3494


Overview
Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.
4) Unit: mm 10.
5±0.
3 4.
6±0.
2 1.
4±0.
1 0.
6±0.
1 3.
0±0.
5 0 to 0.
5 • For PDP • For high-speed switching 1.
4±0.
1 0.
8±0.
1 2.
54±0.
3 2.
5±0.
2 0 to 0.
3 ■ Absolute Maximum Ratings TC = 25°C 1 2 3 (10.
2) (8.
9) (6.
4) (1.
4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 250 ±30 20 80 657 50 1.
4 150 −55 to +150 Unit V V A A mJ W (2.
1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3494 °C °C Note) *: L = 2.
79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf VDD ≈ 100 V, ID = 10 A RL = 10 Ω, VGS = 10 V Conditions ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz 7 82 14 2 450 356 40 36 20 184 29 Min 250 2.
0 4.
0 10 ±1 105 Typ Max Unit V V µA µA mΩ S pF pF pF ns ns ns ns 1.
5±0.
3 ■ Applications 10.
1±0.
3 Publication date: March 2004 SJG00037AED 1 2SK3494 ■ Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qgd Rth(...


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