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IRL3303S

International Rectifier
Part Number IRL3303S
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jan 3, 2006
Detailed Description PD - 9.1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-...
Datasheet PDF File IRL3303S PDF File

IRL3303S
IRL3303S

Overview
PD - 9.
1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.
026Ω G ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2 Pak is suitable for high current applications because of its low internal connection resistance ...


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