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IRL3303

International Rectifier
Part Number IRL3303
Manufacturer International Rectifier
Description HEXFET POWER MOSFET
Published Jan 3, 2006
Detailed Description PD - 9.1322B IRL3303 HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt...
Datasheet PDF File IRL3303 PDF File

IRL3303
IRL3303

Overview
PD - 9.
1322B IRL3303 HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V G S RDS(on) = 0.
026Ω ID = 38A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EA...


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