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STD888

ST Microelectronics
Part Number STD888
Manufacturer ST Microelectronics
Description HIGH CURRENT / HIGH PERFORMANCE / LOW VOLTAGE PNP TRANSISTOR
Published Jan 13, 2006
Detailed Description ® STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Ordering Code STD888 s Marking D888 s s s s VER...
Datasheet PDF File STD888 PDF File

STD888
STD888

Overview
® STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Ordering Code STD888 s Marking D888 s s s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") 3 1 APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS s HEAVY LOAD DRIVER DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj March 2003 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max.
Operating Junction Temperature o Value -60 -30 -6 -5 -10 15 -65 to 150 150 Unit V V V A A W o o C C 1/6 STD888 THERMAL DATA R thj-case • Thermal Resistance Junction-Case Max 8.
33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -6 V I C = -10 mA -30 T j = 100 o C Min.
Typ.
Max.
-10 -1 -10 Unit nA µA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage I C = -100 µ A -60 V V (BR)EBO I E = -100 µ A -6 V V CE(sat) ∗ IC IC IC IC IC IC = = = = = = -500 mA -2 A -5 A -6 A -8 A -10 A I B = -5 mA I B = -50 mA I B = -250 mA I B = -250 mA I B = -400 mA I B = -500 mA I B = -50 mA I B = -250 mA V CE = -1 V V CE = -...


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