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2SK3993

NEC
Part Number 2SK3993
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Jan 20, 2006
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3993 is N-channe...
Datasheet PDF File 2SK3993 PDF File

2SK3993
2SK3993

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION PART NUMBER 2SK3993 2SK3993-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 3.
8 mΩ MAX.
(VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 4770 pF TYP.
• 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±64 ±256 40 1.
0 150 −55 to +150 41 168 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 12.
5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D17322EJ1V0DS00 (1st edition) Date Published February 2005 NS CP(K) Printed in Japan 2004 2SK3993 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 16 A VGS = 10 V, ID = 32 A VGS = 5.
0 V, ID = 16 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.
5 V, ID = 32 A VGS = 10 V RG = 10...


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