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MRF166

Part Number	MRF166
Manufacturer	Motorola
Description	MOSFET BROADBAND RF POWER FETs
Published	Jan 25, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Trans...
Datasheet	MRF166 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors • Low Crss — 4.
5 pF @ VDS = 28 V N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz.
• MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55% • Optional 4–Lead Flange Package (MRF166) • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
D MRF166 MRF166C 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs CASE 211–07, STYLE 2 G S CASE 319–07, STYLE 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 4.
0 70 0.
4 – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.
5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1994 MRF166 MRF166C 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 V, ID = 5.
0 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 — — — — — — 1.
0 1.
0 V mA µA ON CHARACTERISTICS Gate Threshold Voltage (...

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