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MRF157

Tyco Electronics
Part Number MRF157
Manufacturer Tyco Electronics
Description MOS LINEAR RF POWER FET
Published Apr 19, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Lin...
Datasheet PDF File MRF157 PDF File

MRF157
MRF157

Overview
( DataSheet : www.
DataSheet4U.
com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transistor N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz.
• Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) MRF157 600 W, to 80 MHz MOS LINEAR RF POWER FET D G S CASE 368–03, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 60 1350 7.
7 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
13 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge.
Reasonable precaution...


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