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TC55B328J

Toshiba
Part Number TC55B328J
Manufacturer Toshiba
Description 32K x 8-Bit BiCMOS Static RAM
Published Jun 8, 2006
Detailed Description TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is ...
Datasheet PDF File TC55B328J PDF File

TC55B328J
TC55B328J


Overview
TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply.
Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B328P/J features low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access.
The TC55B328P/J is suitable for use in high speed applications such as cache memory and high speed storage.
All inputs and outputs are TIL compatible.
The TC55B328P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features • Fast access time - TC55B328P/J-10 10ns (max.
) - TC55B328P/J-12 12ns (max.
) • Low power dissipation - Operation: - TC55B328P/J-10 170mA (max.
) - TC55B328P/J-12 170mA (max.
) - Standby: 15mA (max.
) • Single 5V power supply: 5V±10% • Fully static operation • Inputs and outputs TIL compatible • Output buffer control: OE • Package: - TC55B328P: DIP28-P-300B - TC55B328J: SOJ28-P-300A Pin Names AO - A14 Address Inputs 1/01 - 1/08 Data Inputs/Outputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input VDD GND Power (+5V) Ground Pin Connection (Top View) TCSSB328P A14 A12 A7 A6 AS A4 A3 A2 Al AO 1/01 1/02 1103 GND Voo WE A13 A8 A9 All OE Ala CE 1/08 1/07 1/06 1/05 1/04 (DIP) TCssB328J A14 Voo A12 We A7 An A6 A8 AS A9 A4 All A3 DE A2 Ala Al a AO 1/08 1/01 1/07 1/02 1/06 1/03 1/05 GND 1/04 (SOJ) TOSH!BA AMERICA ELECTRONIC COMPONENTS.
INC.
8-65 TC55B328P/J-10112 Block Diagram A13 A8 AS A4 A3 A2 A1 AO 1/01 1/02 1103 1104 1/05 1106 1107 1/08 Static RAM MEMORY CELL ARRAY 256 x 128x 8 (262,144) ~ Voo ~ GND SENSE AMP ~ :;) Q.
~ :;) 0=Lw.
:LJo.
WE O--.
.
_--d OEo--+----
  • .
    .
    ---.
    oQc(>>---- CE Operating Mode ~MODE CE OE WE 1/01 -1/08 POWER Re...


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