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TC55B329J

Toshiba
Part Number TC55B329J
Manufacturer Toshiba
Description 32K x 9-Bit BiCMOS Static RAM
Published Jun 8, 2006
Detailed Description TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is ...
Datasheet PDF File TC55B329J PDF File

TC55B329J
TC55B329J


Overview
TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply.
Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage.
All inputs and outputs are TTL compatible.
The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features • Fast access time - TC55B329P/J-10 10ns (max.
) - TC55B329P/J-12 12ns (max.
) • Low power dissipation - Operation: - TC55B329P/J-10 170mA (max.
) - TC55B329P/J-12 170mA (max.
) - Standby: 15mA (max.
) • Single 5V power supply: 5V±10% • Fully static operation • Inputs and outputs TTL compatible • Output buffer control: OE • Package: - TC55B329P: DIP32-P-300 - TC55B329J: SOJ32-P-300 Pin Names AO - A14 1/01 - 1/09 CEf,CE2 WE OE VDD GND NC Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power (+5V) Ground No Connection Pin Connection (Top View) TC558329P NC Voo NC A8 A7 A6 A13 AS A9 A4 A10 A3 All A2 OE Al Al2 AO CEl 1/01 1/09 1/02 1/08 1/03 1/07 1/04 1/06 GNO 1/05 (DIP) TC558329J NC VOO NC A14 A8 CE2 A7 WE A6 A13 AS A9 A4 A10 A3 All A2 OE Al A12 AO m ·1/01 1109 1/02 1/08 1103 1/07 1104 1/06 GND 1/05 (SOJ) TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
8-87 TC55B329P/J-10112 Block Diagram A13 A9 AS A4 A3 A2 A1 AO 1/01 1/02 1/03 1/04 1/05 1/06 1/07 1/08 1/09 V'I V'I UJo::: O:::UJ §~ <{:::> ~Cll 0::: 0::: aUJ ~o o~ 0:::0 Static RAM MEMORY CELL ARRAY 256x128x9 (294,912) ~ Voo .
---0 GND VVE O---------__--Q N~-----=~~~~----------~ ITT o-----or- eE...



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