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TC55B329P

Toshiba
Part Number TC55B329P
Manufacturer Toshiba
Description 32K x 9-Bit BiCMOS Static RAM
Published Jun 8, 2006
Detailed Description TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is ...
Datasheet PDF File TC55B329P PDF File

TC55B329P
TC55B329P

Overview
TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply.
Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage.
All inputs and outputs are TTL compatible.
The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features • Fast access time - TC55B329P/J-10 10ns (max.
) - TC55B329P/J-12 12ns (max.
) • Low power dissipation - Operation: - TC55B329P/J-10 170mA (max.
) - TC55B329P/J-12 170mA (max.
) - Standby: 15mA (max.
) • Single 5V...


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