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IXFT80N15Q

IXYS Corporation
Part Number IXFT80N15Q
Manufacturer IXYS Corporation
Description (IXFx80N15Q) HiPerFET Power MOSFETs Q-Class
Published Oct 13, 2006
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Pre...
Datasheet PDF File IXFT80N15Q PDF File

IXFT80N15Q
IXFT80N15Q

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q VDSS ID25 RDS(on) t rr = 150 V = 80 A = 22.
5 mW £ 200 ns Maximum Ratings 150 150 ± 20 ± 30 80 320 80 45 1.
5 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) TO-264 AA (IXFK) G D S D (TAB) TO-247 TO-264 TO-247 TO-264 TO-268 1.
13/10 Nm/lb.
in.
0.
9/6 Nm/lb.
in.
6 10 4 g g g G = Gate S = Source TAB = Drain Features l l Symbol Test Conditions Characteristic...


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