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IXFT80N10Q

IXYS Corporation
Part Number IXFT80N10Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published May 23, 2011
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances...
Datasheet PDF File IXFT80N10Q PDF File

IXFT80N10Q
IXFT80N10Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q IXFT 80N10Q VDSS ID25 RDS(on) = 100 V = 80 A = 15 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 320 80 30 1.
5 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque (TO-247) TO-247 AD TO-268 300 Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - easier t...


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