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IXFT80N10

IXYS Corporation
Part Number IXFT80N10
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Oct 13, 2006
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sh...
Datasheet PDF File IXFT80N10 PDF File

IXFT80N10
IXFT80N10

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V = 80 A ID25 RDS(on) = 12.
5 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 75 320 80 50 2.
5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.
13/10 Nm/lb.
in.
6 4 g g Features l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
100 2.
0 4.
0 ± 100 TJ = 25°C TJ = 125°C 50 1 12.
5 V V nA µA mA mΩ Advantages l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2000 IXYS All rights reserved 98739 (8/00) DataSheet 4 U .
com www.
DataSheet4U.
com IXFH 80N10 IXFT 80N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
35 55 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1460 490 41 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 2.
5 Ω (External), 63 90 26 180 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 38 65 0.
42 (TO-247) 0.
25 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 ∅P Q R S Dim.
Millimeter Min.
Max.
4.
7 2...


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