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MT3S45T

Toshiba Semiconductor
Part Number MT3S45T
Manufacturer Toshiba Semiconductor
Description VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Published Nov 9, 2006
Detailed Description www.DataSheet4U.com MT3S45T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S45T VCO OSCILLETOR STAGE UHF LOW ...
Datasheet PDF File MT3S45T PDF File

MT3S45T
MT3S45T

Overview
www.
DataSheet4U.
com MT3S45T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S45T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.
1dB (@f=2GHz) High Gain:|S21e| =12.
0dB (@f=2GHz) 2 Marking 3 R4 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.
5 1.
5 30 15 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.
0022g (typ.
) 1 2002-11-13 www.
DataSheet4U.
com MT3S45T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=6mA, f=1GHz VCE=3V, IC=6mA, f=2GHz Min 13.
5 9.
5 - Typ.
18 17.
5 12...


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