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MT3S40T

Toshiba Semiconductor
Part Number MT3S40T
Manufacturer Toshiba Semiconductor
Description Silicon NPN epitaxial planer type Transistor
Published Jan 10, 2007
Detailed Description www.DataSheet4U.com MT3S40T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S40T VCO OSCILLETOR STAGE UHF LOW ...
Datasheet PDF File MT3S40T PDF File

MT3S40T
MT3S40T

Overview
www.
DataSheet4U.
com MT3S40T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S40T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.
2dB (@f=2GHz) High Gain:|S21e| =11.
0dB (@f=2GHz) 2 Marking 3 Q6 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.
5 1.
5 70 35 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.
0022g (typ.
) 1 2002-08-19 MT3S40T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=5mA, f=1GHz VCE=3V, IC=5mA, f=2GHz Min 13 14.
5 9 - Typ.
17 16.
5 11 0.
9 1.
2 Max 1.
8 U...


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