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MT3S46T

Toshiba Semiconductor
Part Number MT3S46T
Manufacturer Toshiba Semiconductor
Description Silicon NPN epitaxial planer type Transistor
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAG...
Datasheet PDF File MT3S46T PDF File

MT3S46T
MT3S46T

Overview
www.
DataSheet4U.
com MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.
2dB (@f=2GHz) High Gain:|S21e| =11.
5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.
5 1.
5 40 20 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.
0022g (typ.
) 1 2002-11-14 MT3S46T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=2GHz Min 11.
5 9 - Typ.
16 17 11.
5 0.
9 1.
2 Max...


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