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FDB8445

Fairchild Semiconductor
Part Number FDB8445
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Nov 20, 2006
Detailed Description FDB8445 N-Channel PowerTrench® MOSFET MPLEMENTATION January 2006 FDB8445 N-Channel PowerTrench® MOSFET 40V, 70A, 9mΩ ...
Datasheet PDF File FDB8445 PDF File

FDB8445
FDB8445

Overview
FDB8445 N-Channel PowerTrench® MOSFET MPLEMENTATION January 2006 FDB8445 N-Channel PowerTrench® MOSFET 40V, 70A, 9mΩ Features „ Typ rDS(on) = 6.
8mΩ at VGS = 10V, ID = 70A „ Typ Qg(10) = 44nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems AD FREE I LE GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) D G S ©2006 Fairchild Semiconductor Corporation 1 FDB8445 Rev A1 (W) www.
fairchildsemi.
com FDB8445 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed (Note 1) EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC (Note 2) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-263, 1in2 copper pad area Ratings 40 ±20 70 Figure 4 102 92 0.
6 -55 to +175 1.
63 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FDB8445 Device FDB8445 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V 40 VDS = 32V VGS = 0V - TJ =150°C - VGS = ±20V - - - V - 1 µA - 250 µA - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance VDS = VGS, ID = 250µA ID = 70A, VGS = 10V ID = 70A, VGS = 10V, TJ = 175°C ...


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