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TGA2505

TriQuint Semiconductor
Part Number TGA2505
Manufacturer TriQuint Semiconductor
Description Power Amplifier
Published Dec 15, 2006
Detailed Description www.DataSheet4U.com Advance Product Information April 5, 2006 13 - 17 GHz 2.5 Watt, 25dB Power Amplifier • • • • • • •...
Datasheet PDF File TGA2505 PDF File

TGA2505
TGA2505

Overview
www.
DataSheet4U.
com Advance Product Information April 5, 2006 13 - 17 GHz 2.
5 Watt, 25dB Power Amplifier • • • • • • • • 10 5 0 -5 -10 -15 -20 11 12 13 14 15 16 17 18 19 TGA2505 Key Features and Performance 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.
25µm pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.
03 x 1.
39 x 0.
10 mm (0.
080 x 0.
055 x 0.
004 inches) Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA 30 25 20 15 10 5 0 S11, S22 (dB) S21 (dB) S21 S11 S22 Primary Applications • • VSAT Point-to-Point Frequency (GHz) 35 34 33 32 31 30 29 28 27 26 25 11 12 13 14 15 16 17 18 19 60 55 50 45 Psat PAE 40 35 30 25 20 15 10 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications.
Specifications are subject to change without notice.
PAE@Psat (%) Psat (dBm) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.
triquint.
com 1 Advance Product Information April 5, 2006 TABLE I MAXIMUM RATINGS Symbol V I + - TGA2505 Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.
43 W 150 C 320 C -65 to 150 0C 0 0 Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ V + | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
When operated at this bias condition with a base plate temperature of 70°C, the median life is reduced from 8.
9E+6 to 1E+6.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure ...


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