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TGA2507

TriQuint Semiconductor
Part Number TGA2507
Manufacturer TriQuint Semiconductor
Description 12-18 GHz Ku-Band 3-Stage Driver Amplifier
Published Jun 22, 2012
Detailed Description Product Data Sheet August 5, 2008 12-18 GHz Ku-Band 3-Stage Driver Amplifier Key Features • • • • • • TGA2507 12-18 G...
Datasheet PDF File TGA2507 PDF File

TGA2507
TGA2507

Overview
Product Data Sheet August 5, 2008 12-18 GHz Ku-Band 3-Stage Driver Amplifier Key Features • • • • • • TGA2507 12-18 GHz Bandwidth 28 dB Nominal Gain 20 dBm P1dB Bias: 5,6,7 V, 80 ± 10% mA Self Bias 0.
5 um 3MI mmW pHEMT Technology Chip Dimensions: 1.
80 x 0.
83 x 0.
1 mm (0.
071 x 0.
031 x 0.
004) in Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 80 mA 32 28 24 Gain (dB) 20 16 12 8 4 0 8 10 12 14 16 18 20 22 Frequency (GHz) 0 Primary Applications • Point to Point Radio • Military Ku-Band • Ku-Band Space Return Loss (dB) -5 -10 -15 -20 -25 Gain IRL • VSAT www.
DataSheet.
net/ ORL -30 -35 -40 24 22 P 1dB (dBm ) 20 18 16 11 12 13 14 15 16 17 18 Frequency (GHz) Note: Datasheet is subject to change without notice.
1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.
com Web: www.
triquint.
com Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Product Data Sheet August 5, 2008 TGA2507 TABLE I MAXIMUM RATINGS 1/ SYMBOL V I + + PARAMETER Positive Supply Voltage Positive Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V 114 mA 20 dBm 0.
91 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ 2/ 2/ 3/ 4/ 5/ PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
When operated at this power dissipation with a base plate temperature of 70° C, the median life is 1.
8 E+6 hrs.
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
www.
DataSheet.
net/ These ratings apply to each individual FET.
TABLE II DC PROBE TESTS (TA = 25 °C Nominal) SYMBOL VBVGS3 VBVGD3 VP2 VP3 PARAMETER Breakdown Voltage gate-source Breakdown Voltage gate-drain Pinch-off Voltage Pinch-off Voltage MINIMUM -30 -30 -1.
5 -1.
5 MAXIMUM -11 -11 -0.
3 -0.
3 VALUE V V V V TriQuint Sem...


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