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APT50GP60S

Advanced Power Technology
Part Number APT50GP60S
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published Dec 19, 2006
Detailed Description www.DataSheet4U.com APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation o...
Datasheet PDF File APT50GP60S PDF File

APT50GP60S
APT50GP60S

Overview
www.
DataSheet4U.
com APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
D3PAK G C C E G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 26A • 100 kHz operation @ 400V, 41A • SSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B_S UNIT 600 ±20 ±30 @ TC = 25°C Volts 100 72 190 190A@600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Safe Operating Area @ TJ = 150°C Total Power Dissipation O...


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