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HY5DU283222AF

Hynix Semiconductor
Part Number HY5DU283222AF
Manufacturer Hynix Semiconductor
Description 128M(4Mx32) GDDR SDRAM
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com HY5DU283222AF 128M(4Mx32) GDDR SDRAM HY5DU283222AF This document is a general product description...
Datasheet PDF File HY5DU283222AF PDF File

HY5DU283222AF
HY5DU283222AF

Overview
www.
DataSheet4U.
com HY5DU283222AF 128M(4Mx32) GDDR SDRAM HY5DU283222AF This document is a general product description and is subject to change without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
7 / Jun.
2004 1 HY5DU283222AF Revision History Revision No.
0.
1 0.
11 0.
2 0.
3 Defined target spec.
500MHz speed bin added Defined IDD specification 1) Added 222MHz with CL3 and tCK_max=10ns at HY5DU283222AF-36 2) Changed VDD_min value of HY5DU283222AF-36 from 2.
375V to 2.
2V 3) Changed AC parameters value of HY5DU283222AF-28/33 - tRCDRD/tRP : from 6 tCK to 5 tCK - tDAL : from 9 tCK to 8 tCK - tRFC : from 19 tCK to 17 tCK 4) Changed IDD2N target specification 5) Changed tCK_max value of HY5DU283222AF-33/36 from 6ns to 10ns Changed CAS Latency of HY5DU283222AF-28 from CL5 to CL4 Changed tRAS_max Value from 120K to 100K in All Frequency Insert Overshoot/ Under Specification Insert tDSS/ tDSH parameter Added 2...


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