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HY5DU283222Q

Hynix Semiconductor
Part Number HY5DU283222Q
Manufacturer Hynix Semiconductor
Description 128M(4Mx32) GDDR SDRAM
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com HY5DU283222Q 128M(4Mx32) GDDR SDRAM HY5DU283222Q This document is a general product description a...
Datasheet PDF File HY5DU283222Q PDF File

HY5DU283222Q
HY5DU283222Q

Overview
www.
DataSheet4U.
com HY5DU283222Q 128M(4Mx32) GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
2/Oct.
02 1 HY5DU283222Q Revision History No.
History 1) Changed some AC parameters a) tAC : Changed from 0.
7ns to 0.
9ns b) tDQSCK : Changed from 0.
6ns to 0.
7ns c) tRCD/tRP : Changed from 4clks to 5clks at 222MHz and from 3clks to 4clks at 200/183MHz 1) 2) 3) 4) 0.
5 Removed 166MHz part from speed bin Defined IDD specification Defined AC parameters of 250MHz part Changed Pin Capacitance a) Input Clock capacitance : Changed from 2/3pF to 1.
7/2.
7pF (min/max) b) All other Input-only pins capacitance : Changed from 2/3pF to 1.
7/2.
7pF (min/max) c) Input/Output capacitance (DQ, DQS, DM) : Changed from 4/5pF to 3.
7/4.
7pF (min/max) 5) Changed some AC parameters a) tIS/tIH : Changed from 0.
9ns to 1.
0ns b) tDS/tDH : ...


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