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HY5DU283222F

Hynix Semiconductor
Part Number HY5DU283222F
Manufacturer Hynix Semiconductor
Description 128M(4Mx32) GDDR SDRAM
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com HY5DU283222F 128M(4Mx32) GDDR SDRAM HY5DU283222F This document is a general product description a...
Datasheet PDF File HY5DU283222F PDF File

HY5DU283222F
HY5DU283222F

Overview
www.
DataSheet4U.
com HY5DU283222F 128M(4Mx32) GDDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
2/Sep.
02 1 HY5DU283222F Rvision History Revision No.
0.
4 History 1) Part Number changed from HY5DU283222F to HY6U22F 1) tAC/tDQSCK, tRCD/tRP parameters each speed changed as the followings a) tAC : changed from 0.
7ns to 0.
9ns at 3.
3/4/4.
5ns b) tDQSCK : changed from 0.
6ns to 0.
7ns at 3.
3/4/4.
5ns c) tRCD/tRP : changed from 5clk to 6clk at 3.
3ns and 4clk to 5clk at 4/4.
5ns 1) 222Mhz speed bin removed 2) IDD Specification of 200/250MHz part defined 3) AC parameters of 275MHz part defined 4) ViH/ViL changed Vref+/- 0.
35 into Vref +/- 0.
45 5) Part number changed from HY6U22F to HY5DU283222F 1) Pin capacitance defined a) CK, /CK, All other input-only pins : min 1pF, Max 3PF b) DQ, DQS, DM : min 3pF, Max 5pF 1) 2...


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