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SSM6N15FU

Toshiba Semiconductor
Part Number SSM6N15FU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 27, 2007
Detailed Description SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog...
Datasheet PDF File SSM6N15FU PDF File

SSM6N15FU
SSM6N15FU

Overview
SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog Switching Applications Unit: mm • Small package • Low ON resistance : Ron = 4.
0 Ω (max) (@VGS = 4 V) : Ron = 7.
0 Ω (max) (@VGS = 2.
5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 200 mW Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-2J1C high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 6.
8 mg (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolu...


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