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SSM6N15FE

Toshiba Semiconductor
Part Number SSM6N15FE
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Sep 19, 2014
Detailed Description SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog...
Datasheet PDF File SSM6N15FE PDF File

SSM6N15FE
SSM6N15FE

Overview
SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog Switching Applications • • Small package Low ON resistance : Ron = 4.
0 Ω (max) (@VGS = 4 V) : Ron = 7.
0 Ω (max) (@VGS = 2.
5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor R...


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