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2SD1804

UTC
Part Number 2SD1804
Manufacturer UTC
Description NPN SILICON TRANSISTOR
Published Apr 12, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS  FEATURES * Low co...
Datasheet PDF File 2SD1804 PDF File

2SD1804
2SD1804

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS  FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE.
* Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.
1 TO-220 1 1 TO-251 TO-252  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1804L-x-TA3-T 2SD1804G-x-TA3-T 2SD1804L-x-TM3-T 2SD1804G-x-TM3-T 2SD1804L-x-TN3-R 2SD1804G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-220 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE Packing Tube Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R209-006.
F 2SD1804 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage Emitter-Base Voltage VCEO 50 V VEBO 6 V Collector Current Collector Current(PULSE) IC IC(PULSE) 8 12 A A Collector Dissipation TA=25°C TO-220 TO-251/TO-252 TC=25°C TO-220 TO-251/TO-252 PD 2 1 W 65 20 W Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
°C °C Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO BVCEO IC=10μA, IE=0 IC=1mA, RBE= BVEBO ICBO IE=10μA, IC=0 VCB=40V, IE=0 IEBO hFE1 VEB=4V, IC=0 VCE=2V, IC=0.
5A hFE2 fT VCE=2V...


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