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AP2306AGN

Advanced Power Electronics
Part Number AP2306AGN
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 3, 2007
Detailed Description AP2306AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼...
Datasheet PDF File AP2306AGN PDF File

AP2306AGN
AP2306AGN

Overview
AP2306AGN Pb Free Plating Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 35mΩ 5A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
com Parameter Rating 30 ± 12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 5 4 20 1.
38 0.
01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Res...


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