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AP2306AGEN

Advanced Power Electronics
Part Number AP2306AGEN
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 1, 2014
Detailed Description AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package...
Datasheet PDF File AP2306AGEN PDF File

AP2306AGEN
AP2306AGEN

Overview
AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50mΩ 4.
1A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.
1 3.
3 16 1.
38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200812031 AP2306AGEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.
5V, ID=4A VGS=2.
5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=30V, VGS=0V VGS=+6V ID=3A VDS=15V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.
0MHz Min.
30 0.
5 - Typ.
15 8.
7 1.
3 3.
5 65 130 470 290 610 60 50 Max.
Units 50 72 1.
5 10 +30 14 1000 V mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On...


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