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CED830G

Chino-Excel Technology
Part Number CED830G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell...
Datasheet PDF File CED830G PDF File

CED830G
CED830G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 4.
5A, RDS(ON) = 1.
5Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 500 Units V V A A W W/ C C ±30 4.
5 18 68 0.
54 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperatu...


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