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FPD1050

Filtronic
Part Number FPD1050
Manufacturer Filtronic
Description 0.75W POWER PHEMT
Published May 11, 2007
Detailed Description 0.75W POWER PHEMT • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stabl...
Datasheet PDF File FPD1050 PDF File

FPD1050
FPD1050

Overview
0.
75W POWER PHEMT • FEATURES ♦ 28.
5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) FPD1050 GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE THICKNESS: 100 µm BONDING PADS: >85 x 60 µm • DESCRIPTION AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.
25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been opt...


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