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FQA10N80C

Fairchild Semiconductor
Part Number FQA10N80C
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published May 29, 2007
Detailed Description FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RD...
Datasheet PDF File FQA10N80C PDF File

FQA10N80C
FQA10N80C

Overview
FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.
1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D G TO-3P G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQA10N80C 800 10 6.
32 40 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 920 10 24 4.
0 240 1.
92 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
24 -- Max 0.
52 -40 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FQA10N80C Rev.
A1 FQA10N80C 800V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA10N80C FQA10N80C Device FQA10N80C FQA10N80C_F109 Package TO-3P TO-3PN Reel Size --- Tape Width --- Quantity 30 30 Electrical...


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