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IRF7107

Part Number	IRF7107
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 4, 2007
Detailed Description	PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Re...
Datasheet	IRF7107 PDF File

Overview

PD - 9.
1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced...

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