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IRG4BC30FD1

International Rectifier
Part Number IRG4BC30FD1
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: opti...
Datasheet PDF File IRG4BC30FD1 PDF File

IRG4BC30FD1
IRG4BC30FD1

Overview
PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
• IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics.
• Industry standard TO-220AB package.
G E VCES = 600V VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specific application conditions.
• FRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less / no snubbing.
TO-220AB www.
DataSheet4U.
com Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.
Fig.
C.
T.
5) Clamped Inductive Load current Max.
600 31 17 120 120 8 16 ±20 100 42 -55 to +150 Units V A d c Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 Screw V W PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
50 ––– 2.
0 (0.
07) Max.
1.
2 2.
0 ––– 80 ––– Units °C/W g (oz.
) www.
irf.
com 1 09/03/03 IRG4BC30FD1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdow...


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