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IRG4BC30FD

International Rectifier
Part Number IRG4BC30FD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 27, 2005
Detailed Description PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized f...
Datasheet PDF File IRG4BC30FD PDF File

IRG4BC30FD
IRG4BC30FD

Overview
PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A n-cha nnel Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance Parameter RqJC RqJC RqCS RqJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
------------------------- Typ.
----------0.
50 ----2 (0.
07) Max.
1.
2 2.
5 -----80 ------ Units °C/W g (oz) www.
irf.
com 1 12/8/98 IRG4BC30FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Para...


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