DatasheetsPDF.com

GSS4936

GTM
Part Number GSS4936
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GSS4936 PDF File

GSS4936
GSS4936

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 37m 5.
8A The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Simple Drive Requirement *Low Gate Charge *Fast Switching Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0° 0.
40 0.
19 6.
20 5.
00 4.
00 8° 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45° 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 25 ±20 5.
8 4.
6 30 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GSS4936 Page: 1/5 ISSUED DATE :2005/10/31 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
03 6.
5 6.
9 1.
2 4.
5 6 17.
5 14.
5 5.
5 218 155 63 Max.
3.
0 ±100 1 25 37 60 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=5A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=5A VGS=4.
5V, ID=3.
5A ID=5A VDS=16V VGS=5V VDS=16V ID=5A VGS=10V RG=3.
3 RD=3.
2 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Tim...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)