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GSS4957

GTM
Part Number GSS4957
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B GSS4957 P-CHANNEL ENHANC...
Datasheet PDF File GSS4957 PDF File

GSS4957
GSS4957

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B GSS4957 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 24m -7.
7A The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low On-Resistance *Simple Drive Requirement *Dual P MOSFET Package Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0 0.
40 0.
19 6.
20 5.
00 4.
00 8 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 20 -7.
7 -6.
1 -30 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GSS4957 Page: 1/4 ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
-30 -1.
0 Typ.
-0.
02 12 20 30 27 5 18 14 11 38 25 1670 530 435 3 Max.
-3.
0 100 -1 -25 24 36 45 2670 4.
5 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-7A VGS=-4.
5V, ID=-5A ID=-7A VDS=-24V VGS=-4.
5V VDS=-15V ID=-1A VGS=-10V RG=3.
3 RD=15 VGS=0V VDS=-25V f=1.
0MHz f=1.
0MHz Static Drain-Source On-Resistance2 Total Gate Charge2 ...


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