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GSS9960

GTM
Part Number GSS9960
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B GSS9960 N-CHANNEL ENHANC...
Datasheet PDF File GSS9960 PDF File

GSS9960
GSS9960

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B GSS9960 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20m 7.
8A The GSS9960 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low On-Resistance *Fast Switching Speed Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0 0.
40 0.
19 6.
20 5.
00 4.
00 8 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 40 20 7.
8 6.
2 20 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GSS9960 Page: 1/5 ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
40 1.
0 Typ.
0.
032 25 14.
7 7.
1 6.
8 11.
5 6.
3 28.
2 12.
6 1725 235 145 Max.
3.
0 100 1 25 20 32 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=7A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=40V, VGS=0 VDS=32V, VGS=0 VGS=10V, ID=7A VGS=4.
5V, ID=5A ID=7A VDS=20V VGS=4.
5V VDS=20V ID=1A VGS=10V RG=3.
3 RD=20 VGS=0V VDS=25V f=1.
0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise T...


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