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GSS9962

GTM
Part Number GSS9962
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : GSS9962 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GSS9962 PDF File

GSS9962
GSS9962

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : GSS9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 25m 7A The GSS9962 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
*Simple Drive Requirement *Low On-resistance Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0° 0.
40 0.
19 6.
20 5.
00 4.
00 8° 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45° 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 40 ±20 7 5.
5 20 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GSS9962 Page: 1/4 ISSUED DATE :2005/11/18 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
40 1.
0 Typ.
0.
1 11 25.
8 4.
4 9.
1 10.
6 6.
8 26.
3 12 1165 205 142 Max.
3.
0 ±100 1 25 25 40 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=7A VGS= ±20V VDS=40V, VGS=0 VDS=32V, VGS=0 VGS=10V, ID=7A VGS=4.
5V, ID=5A ID=7A VDS=32V VGS=10V VDS=20V ID=1A VGS=10V RG=5.
7 RD=20 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Tu...


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