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HAT2170H

Renesas Technology
Part Number HAT2170H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Oct 5, 2007
Detailed Description HAT2170H Silicon N Channel MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low dr...
Datasheet PDF File HAT2170H PDF File

HAT2170H
HAT2170H

Overview
HAT2170H Silicon N Channel MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.
3 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 4 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAPNote2 EARNote2 PchNote3 θch-C Tch Tstg REJ03G0121-0500 Rev.
5.
00 Sep 26, 2005 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Ratings 40 ±20 45 180 45 30 72 30 4.
17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.
5.
00, Sep 26, 2005, page 1 of 7 HAT2170H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.
5 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 39 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 4.
Pulse test Typ — — — — — 3.
3 3.
7 65 4650 900 285 0.
5 62 18 7.
0 15 43 44 7.
1 0.
84 40 Max — — ±10 1 3.
0 4.
2 5.
0 — — — — — — — — — — — — 1.
1 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions I...


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