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HAT2179R

Renesas Technology
Part Number HAT2179R
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Oct 5, 2007
Detailed Description HAT2179R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High d...
Datasheet PDF File HAT2179R PDF File

HAT2179R
HAT2179R

Overview
HAT2179R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1570-0200 Rev.
2.
00 Jul 17, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage VDSS 600 VGSS ±30 Drain current Drain peak current ID 0.
7 ID Note1 (pulse) 2.
0 Body-drain diode reverse drain current IDR 0.
7 Body-drain diode reverse drain peak current IDR Note1 (pulse) 2.
0 Channel dissipation Pch Note2 2.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A A W °C °C REJ03G1570-0200 Rev.
2.
00 Jul 17, 2009 Page 1 of 6 HAT2179R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 600 V, VGS = 0 Gate to source leak current IGSS — — ±0.
1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage Forward transfer admittance Static drain to source on state VGS(off) 3.
0 — 5.
0 |yfs| 0.
8 1.
2 — RDS(on) — 3.
5 4.
5 V VDS = 10 V, ID = 1 mA S ID = 0.
4 A, VDS = 10 V Note3 Ω ID = 0.
4 A, VGS = 10 V Note3 resistance Input capacitance Output capacitance Reverse transfer capacitance Ciss — 280 — Coss — 31 — Crss — 3.
8 — pF VDS = 25 V pF VGS = 0 pF f = 1 MHz Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3.
Pulse test td(on) tr td(off) tf Qg Qgs Qgd VDF trr — 24 — — 15 — — 50 — — 58 — — 10 — — 1.
6 —...


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