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HAT2174H

Renesas Technology
Part Number HAT2174H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 7, 2008
Detailed Description HAT2174H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • Hig...
Datasheet PDF File HAT2174H PDF File

HAT2174H
HAT2174H

Overview
HAT2174H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 21 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0041-0400 Rev.
4.
00 Dec 11, 2006 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.
25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.
4.
00 Dec 11, 2006 page 1 of 7 HAT2174H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 4.
0 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 21 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 4.
Pulse test Typ — — — — — 21 22 35 2280 285 100 0.
5 33.
5 12.
4 8.
4 18 13 31 5.
5 0.
84 50 Max — — ±10 1 6.
0 27 30 — — — — — — — — — — — — 1.
10 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0...


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