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H5N3003P

Renesas Technology
Part Number H5N3003P
Manufacturer Renesas Technology
Description N-Channel MOSFET
Published Dec 28, 2007
Detailed Description www.DataSheet4U.com H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-15...
Datasheet PDF File H5N3003P PDF File

H5N3003P
H5N3003P

Overview
www.
DataSheet4U.
com H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.
2.
00 Aug.
01.
2003 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S 2 3 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00, Aug.
01.
2003, page 1 of 9 www.
DataSheet4U.
com H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 Note1 Ratings 300 ±30 40 160 40 160 30 150 0.
833 150 –55 to +150 Unit V V A A A A A W °C /W °C °C θch-c Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Rev.
2.
00, Aug.
01.
2003, page 2 of 9 www.
DataSheet4U.
com ...


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