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H5N3004P

Renesas Technology
Part Number H5N3004P
Manufacturer Renesas Technology
Description N-Channel MOSFET
Published Dec 28, 2007
Detailed Description www.DataSheet4U.com H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.0 Apr. 2002 Fea...
Datasheet PDF File H5N3004P PDF File

H5N3004P
H5N3004P

Overview
www.
DataSheet4U.
com H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.
0 Apr.
2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) • Avalanche ratings Outline TO-3P D G 1 S 2 3 1.
Gate 2.
Drain (Flange) 3.
Source H5N3004P www.
DataSheet4U.
com Absolute Maximum Ratings (Ta=25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAPNote Pch 3 Note1 Note1 Ratings 300 ±30 25 100 25 100 25 150 0.
833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Note2 θch-c Tch Tstg Rev.
0, Apr.
2002, page 2 of 2 H5N3004P www.
DataSheet4U.
com Electrical Characteristic...


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