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H5N3008P

Renesas Technology
Part Number H5N3008P
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.3.00 Oct 16, 2006 Features • Low on-r...
Datasheet PDF File H5N3008P PDF File

H5N3008P
H5N3008P

Overview
H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.
3.
00 Oct 16, 2006 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Pch Note2 Tch Tstg Ratings 300 ±30 40 160 40 30 150 150 –55 to +150 Unit V V A A A A W °C °C Rev.
3.
00 Oct 16, 2006 page 1 of 6 H5N3008P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current ...


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