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K3757

Toshiba Semiconductor
Part Number K3757
Manufacturer Toshiba Semiconductor
Description 2SK3757
Published Jan 15, 2008
Detailed Description www.DataSheet4U.com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Reg...
Datasheet PDF File K3757 PDF File

K3757
K3757

Overview
www.
DataSheet4U.
com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
9 Ω (typ.
) High forward transfer admittance: |Yfs| = 1.
0 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 2 5 30 103 2 3 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipati...


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